Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers
نویسندگان
چکیده
منابع مشابه
Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers
This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10(-15) cm(2) s(-1), 2 orders magnitude lower than ...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2015
ISSN: 2045-2322
DOI: 10.1038/srep12641